K Wittmaack : rechercher sur Z-Library

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 582 KB

english, 2008

Annealing of boron-implanted silicon using a CW CO2 Laser

P. H. Tsien, S. C. Tsou, M. Takai, D. Röschenthaler, M. Ramin, H. Ryssel, I. Ruge, K. Wittmaack

Journal:

physica status solidi (a)

Année:

1981

Langue:

english

Fichier:

PDF, 609 KB

english, 1981

Towards the ultimate limits of depth resolution in sputter profiling: Beam-induced chemical changes and the importance of sample quality

Journal:

Naturwissenschaften (The Science of Nature)

Année:

1994

Langue:

english

Fichier:

PDF, 1.37 MB

english, 1994

Functioning of normal and ectopic electroreceptors

A. Roth, J. Wittmaack

Journal:

Année:

1991

Langue:

english

Fichier:

PDF, 254 KB

english, 1991

Erosion of long-term wall samples in JET

J. Roth, J. Ehrenberg, K. Wittmaack, P. Coad, J.B. Roberto

Journal:

Journal of Nuclear Materials

Année:

1987

Langue:

english

Fichier:

PDF, 373 KB

english, 1987

Depth resolution in sputter profiling: Evidence against the sequential layer sputtering model

K. Wittmaack, F. Schulz

Journal:

Thin Solid Films

Année:

1978

Langue:

english

Fichier:

PDF, 607 KB

english, 1978

Energy dependence of ion induced electron yields of aluminium and silicon bombarded with Ne+, O+, and O2+

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Journal:

Année:

1991

Langue:

english

Fichier:

PDF, 513 KB

english, 1991

Towards a realistic description of the contribution of primary and secondary aerosols to ambient particle number and mass distributions

Journal of Aerosol Science

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 267 KB

english, 2004

[IEEE 19th International Symposium on Power Semiconductor Devices and Ics - Jeju Island (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - A18 - a novel 0.18μm Smart Power SOC IC Technology for Automotive Applications

Uhlig, T., Bemmann, A., Ellmers, C., Furnhammer, F., Gross, M., Hu, Y.H., Liu, J., Ludwig, R.-R., Reinhold, M., Stoisiek, M., Votintseva, E., Wittmaack, M.

Année:

2007

Langue:

english

Fichier:

PDF, 1.65 MB

english, 2007

Ranges of low-energy, light ions in amorphous silicon

Wach, W., Wittmaack, K.

Journal:

Physical Review B

Année:

1983

Langue:

english

Fichier:

PDF, 434 KB

english, 1983

Characterization of Carbon Nanoparticles in Ambient Aerosols by Scanning Electron Microscopy and Model Calculations

Wittmaack, Klaus

Journal:

Journal of the Air & Waste Management Association (1995-)

Année:

2004

Langue:

english

Fichier:

PDF, 19.54 MB

english, 2004

An averaging method applied to a duffing equation

Luisa Elgueta, A., Fiebig-Wittmaack, Melitta, Villacran, Maria Teresa

Journal:

Applicable Analysis

Année:

1996

Langue:

english

Fichier:

PDF, 234 KB

english, 1996

[Topics in Applied Physics] Sputtering by Particle Bombardment III Volume 64 || Production of microstructures by ion beam sputtering

Behrisch, Rainer, Wittmaack, Klaus

Année:

1991

Langue:

english

Fichier:

PDF, 1.85 MB

english, 1991

Highly accurate nuclear and electronic stopping cross sections derived using Monte Carlo simulations to reproduce measured range data

Wittmaack, Klaus, Mutzke, Andreas

Journal:

Journal of Applied Physics

Année:

2017

Langue:

english

Fichier:

PDF, 2.92 MB

english, 2017

Sputtering Yield Changes, Surface Movement and Apparent Profile Shifts in SIMS Depth Analyses of Silicon Using Oxygen Primary Ions

Wittmaack, K.

Journal:

Année:

1996

Langue:

english

Fichier:

PDF, 1.13 MB

english, 1996

Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: a procedure for eliminating the matrix effect

Wittmaack, K.

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 429 KB

english, 1998

Local SiO2 formation in silicon bombarded with oxygen above the critical angle for beam-induced oxidation: new evidence from sputtering yield ratios and correlation with data obtained by other techniques

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 636 KB

english, 2000

Surface recession of silicon under normally incident oxygen bombardment studied by atomic force microscopy of microscale sputtered craters

K. Wittmaack, M. Strigl, A. Horwarth

Journal:

Wilfried Szymczak, Manfred Wolf, Klaus Wittmaack

Année:

2000

Langue:

english

Fichier:

PDF, 655 KB

english, 2000

Characterisation of Fulvic Acids and Glycyrrhizic Acid by Time-of-Flight Secondary Ion Mass Spectrometry

Journal:

CLEAN – Soil, Air, Water

Année:

2001

Fichier:

PDF, 730 KB

2001

Positivity Preserving in Difference Schemes for the 2D Diffusive Transport of Atmospheric Gases

Melitta Fiebig-Wittmaack, Wolfgang Börsch-Supan

Journal:

Journal of Computational Physics

Année:

1994

Fichier:

PDF, 253 KB

1994

A low background secondary ion mass spectrometer with quadrupole analyser

K. Wittmaack, J. Maul, F. Schulz

Journal:

International Journal of Mass Spectrometry and Ion Physics

Année:

1973

Langue:

english

Fichier:

PDF, 964 KB

english, 1973

Pre-equilibrium variation of the secondary ion yield

International Journal of Mass Spectrometry and Ion Physics

Journal:

Année:

1975

Langue:

english

Fichier:

PDF, 783 KB

english, 1975

Ion-and electron-excited residual-gas analysis using a SIMS instrument

International Journal of Mass Spectrometry and Ion Physics

Journal:

Année:

1982

Langue:

english

Fichier:

PDF, 555 KB

english, 1982

Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPE

M. Druminski, H.-D. Wolf, K.-H. Zschauer, K. Wittmaack

Journal:

Journal of Crystal Growth

Année:

1982

Langue:

english

Fichier:

PDF, 593 KB

english, 1982

Stability of stationary solutions of a one-dimensional parabolic equation with homogeneous Neumann boundary conditions

Wolfgang Börsch-Supan, Melitta Fiebig-Wittmaack

Journal:

Journal of Differential Equations

Année:

1991

Langue:

english

Fichier:

PDF, 524 KB

english, 1991

Beam formation in a triode ion gun

Journal:

Année:

1974

Langue:

english

Fichier:

PDF, 1.16 MB

english, 1974

The influence of sputtering, range shortening and stress-induced outdiffusion on the retention of xenon implanted in silicon

P. Blank, K. Wittmaack, F. Schulz

Journal:

Année:

1976

Langue:

english

Fichier:

PDF, 515 KB

english, 1976

Current density effects in secondary ion emission studies

Journal:

Année:

1976

Langue:

english

Fichier:

PDF, 431 KB

english, 1976

Determination of ion source pressure from discharge characteristics

K. Wittmaack, W. Wach

Journal:

Année:

1977

Langue:

english

Fichier:

PDF, 462 KB

english, 1977

Low energy ion beam transport through apertures

Journal:

Année:

1977

Langue:

english

Fichier:

PDF, 479 KB

english, 1977

Comparison of xenon retention in ion implanted silicon dioxide and oxygen-doped silicon

W. Wach, K. Wittmaack

Journal:

Année:

1978

Langue:

english

Fichier:

PDF, 508 KB

english, 1978

Projectile-energy dependence of compositional changes produced in sputtering of a dilute Si(Fe, W) alloy

K. Wittmaack, P. Blank

Journal:

Année:

1980

Langue:

english

Fichier:

PDF, 316 KB

english, 1980

Comparison of ion-excited Auger electron emission and secondary ion emission from silicon bombarded with noble gas ions

Journal:

Année:

1980

Langue:

english

Fichier:

PDF, 320 KB

english, 1980

Aspects of quantitative secondary ion mass spectrometry

Klaus Wittmaack̀

Journal:

Nuclear Instruments and Methods in Physics Research

Année:

1980

Langue:

english

Fichier:

PDF, 1.23 MB

english, 1980

Comparison of the retention characteristics of low-energy xenon and caesium implanted in silicon

N. Menzel, K. Wittmaack

Journal:

Année:

1981

Langue:

english

Fichier:

PDF, 430 KB

english, 1981

Profile distortions and atomic mixing in SIMS analysis using oxygen primary ions

K. Wittmaack, W. Wach

Journal:

Nuclear Instruments and Methods in Physics Research

Année:

1981

Langue:

english

Fichier:

PDF, 573 KB

english, 1981

Impact-energy dependence of the angular distribution of gold sputtered from a (111) crystal at 100 and 300 K

W. Szymczak, K. Wittmaack

Journal:

Nuclear Instruments and Methods in Physics Research

Année:

1982

Langue:

english

Fichier:

PDF, 413 KB

english, 1982

Beam-induced broadening effects in sputter depth profiling

Klaus Wittmaack

Journal:

Vacuum

Année:

1984

Langue:

english

Fichier:

PDF, 1.88 MB

english, 1984

Oxygen-concentration dependence of secondary ion yield enhancement

Journal:

Surface Science Letters

Année:

1981

Langue:

english

Fichier:

PDF, 57 KB

english, 1981

Secondary ion yield variations due to cesium implantation in silicon

Journal:

Surface Science Letters

Année:

1983

Langue:

english

Fichier:

PDF, 69 KB

english, 1983

Impact-energy dependence of atomic mixing and selective sputtering of light impurities in cesium-bombarded silicon